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Stealth dicing equipment

Equipment Function: This equipment precisely focuses a specific wavelength of laser light onto the interior of a wafer, forming an extremely thin modified layer.

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Product Description

Equipment Function: This process precisely focuses a laser with a specific wavelength inside the wafer to create an ultra-thin modified layer. The wafer is then cleanly separated along the modified path by external force, such as wafer expansion or blade splitting, enabling damage-free and dust-free chip dicing. Unlike conventional blade dicing or laser ablation cutting, which removes material from the surface, this technology is a cold processing method based on internal modification followed by controlled separation.

Wide Application Areas: Primarily used for third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), as well as glass and quartz materials.

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Equipment Parameters

Product Name	Stealth dicing equipment
Processing?Size	Compatible with 4-inch, 6-inch, 8-inch, and 12-inch wafers.
Accuracy	XY axis positioning accuracy (mm)	±0.001
Accuracy	XY axis repeat positioning accuracy (mm)	±0.0005
Laser	Laser type	Infrared picosecond/femtosecond
	power stability	≤2%
	Beam quality M2	<1.2
	Laser power (W)	≥3W
Process Parameters	Straightness （mm）	≤0.005
Process Parameters	Cutting path width (mm)	≤0.02
Dimensions	155014502200 (length, width, height)
Weight	Approximately 1.6 tons